[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - Characteristics of different structure sub-100nm MOSFETs with high-k gate dielectrics
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![[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - Characteristics of different structure sub-100nm MOSFETs with high-k gate dielectrics](/images/quick-response-icon.jpg){kind=icon}
内容摘要
[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - Characteristics of different structure sub-100nm MOSFETs with high-k gate dielectrics
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