[IEEE 2013 15th European Conference on Power Electronics and Applications (EPE) - Lille, France (2013.09.2-2013.09.6)] 2013 15th European Conference on Power Electronics and Applications (EPE) - SiC/GaN power semiconductor devices inter-electrode capacitances characterization based on multiple current probes
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![[IEEE 2013 15th European Conference on Power Electronics and Applications (EPE) - Lille, France (2013.09.2-2013.09.6)] 2013 15th European Conference on Power Electronics and Applications (EPE) - SiC/GaN power semiconductor devices inter-electrode capacitances characterization based on multiple current probes](/images/quick-response-icon.jpg){kind=icon}
内容摘要
[IEEE 2013 15th European Conference on Power Electronics and Applications (EPE) - Lille, France (2013.09.2-2013.09.6)] 2013 15th European Conference on Power Electronics and Applications (EPE) - SiC/GaN power semiconductor devices inter-electrode capacitances characterization based on multiple current probes
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